Department of Physics

Indian Institute Of Technology Madras , Chennai
Dr. Jayeeta Bhattacharyya
HSB 202B
DESIGNATION

Associate Professor

Ph.D.

TIFR Mumbai

CURRENT RESEARCH INTEREST

Spectroscopic study of semiconductor heterostructures like quantum wells and quantum dots, Time resolved measurements, THz spectroscopy, Optical anisotropy

CONTACT

044 - 2257 4856

jayeeta@iitm.ac.in

RESEARCH GROUPS

 Current Research :



 Recent Publications :

Charge transfer mediated photoluminescence enhancement in carbon dots embedded in TiO2 nanotube matrix

Anu Babusenan, B.Pandey, Somnath C.Roy, JayeetaBhattacharyya

Carbon

Volume: 161 Page: 535 DOI: https://doi.org/10.1016/j.carbon.2020.01.097

Year: 2020

Optical polarization anisotropy induced by molecular alignment in pentacene films confined in micron sized grooves etched in SiO2 substrate

Anu Babusenan, Sanjoy Jena , Debdutta Ray and Jayeeta Bhattacharyya

Mater. Res. Express

Volume: 6 Page: 046402 DOI: https://doi.org/10.1088/2053-1591/aaf911

Year: 2019

Investigation of non-linear dependence of exciton recombination efficiency on PCBM concentration in P3HT:PCBM blends

Anu Babusenan, Suman Mondal, Saranya R, Soumya Dutta, Manoj Gopalakrishnan and Jayeeta Bhattacharyya

Mater. Res. Express (2019) http://dx.doi.org/10.1088/2053-1591/ab1daa

Year: 2019

Study of exciton-polaron interaction in pentacene field effect transistors using high sensitive photocurrent measurements

Haripriya Kesavan, Subhamoy Sahoo, Sanjoy Jena, Prashanth Kumar Manda, Amogh Kumar Baranwal, Soumya Dutta, Jayeeta Bhattacharyya and Debdutta Ray

Journal of Applied Physics

Year: 2019

Organic field effect transistors (OFETs) of poly(p-phenylenevinylene) fabricated by chemical vapor deposition (CVD) with improved hole mobility

Deepak Bhat, Sanjoy Jena, Anu Babusenan, Jayeeta Bhattacharyya and Debdutta Ray

Synthetic Metals

Year: 2019

Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation

D. Stephan, J. Bhattacharyya, Y. H. Huo, O. G. Schmidt, A. Rastelli, M. Helm and H. Schneider

Appl. Phys. Lett.

Volume: 108 Page: 082107 DOI: http://dx.doi.org/10.1063/1.4942893

Year: 2016

Magnetic control of Coulomb scattering and terahertz transition among excitons

J. Bhattacharyya, S. Zybell, F. Eßer, M. Helm, H. Schneider, L. Schneebeli, C. N. Böttge, B. Breddermann, M. Kira, S. W. Koch, A. M. Andrews, and G. Strasser

Phys. Rev. B

Volume: 89 Page: 125313

Year: 2014

Characterizing intra-exciton Coulomb scattering in terahertz excitations

Zybell, S.; Bhattacharyya, J.; Winnerl, S.; Eßer, F.; Helm, M.; Schneider, H.; Schneebeli, L.; Böttge, C. N.; Kira, M.; Koch, S. W.; Andrews, A. M.; Strasser, G.

Applied Physics Letters

Volume: 105 Page: 201109 DOI: http://dx.doi.org/10.1063/1.4902431

Year: 2014

Observation of forbidden exciton transitions mediated by Coulomb interactions in photoexcited GaAs quantum wells

W. D. Rice, J. Kono, S. Zybell, S. Winnerl, J. Bhattacharyya, H. Schneider, M. Helm, B. Ewers, A. Chernikov, M. Koch, S. Chatterjee, G. Khitrova, H. M. Gibbs, L. Schneebeli, B. Breddermann, M. Kira, and S. W. Koch

Phys. Rev. Lett.

Volume: 110 Page: 137404

Year: 2013

In-plane interdot carrier transfer in InAs/GaAs quantum dots

J. Bhattacharyya, S. Zybell, S. Winnerl, M. Helm, M. Hopkinson, L. R. Wilson, and H. Schneider

Appl. Phys. Lett.

Volume: 100 Page: 152101

Year: 2012

Simultaneous time and wavelength resolved spectroscopy under two-colour near infrared and terahertz excitation

J. Bhattacharyya, M. Wagner, S. Zybell, S. Winnerl, D. Stehr, M. Helm, and H. Schneider

Rev. Sci. Instrum.

Volume: 82 Page: 103107

Year: 2011

Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots

J. Bhattacharyya, M. Wagner, M. Helm, M. Hopkinson, L. R. Wilson, and H. Schneider

Appl. Phys. Lett.

Volume: 97 Page: 031101

Year: 2010

Are AlN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspective

J. Bhattacharyya, S. Ghosh, and H. T. Grahn

Phys. Stat. Sol. (b)

Volume: 246 Page: 1184

Year: 2009

Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

J. Bhattacharyya, S. Ghosh, and H. T. Grahn

Appl. Phys. Lett.

Volume: 93 Page: 051913

Year: 2008

Electroreflectance lineshapes in multilayered semiconductor structures: Influence of the linear electro-optic effect

J. Bhattacharyya, S. Ghosh, B. M. Arora, and T. J. C. Hosea

Phys. Rev. B

Volume: 73 Page: 195312

Year: 2008