Department of Physics

Indian Institute Of Technology Madras , Chennai
Dr. K Lakshmi Ganapathi
MSRC 110
DESIGNATION

DST INSPIRE Faculty

Ph.D.

IISc Bangalore

CURRENT RESEARCH INTEREST

Nanoelectronic devices, Device Physics, 2D materials and High-k dielectrics integration, Thin films Synthesis, Properties and their Applications

CONTACT

044 - 2257 4850

klganapathi@iitm.ac.in

RESEARCH GROUPS

 Current Research :



 Recent Publications :

Interface States Reduction in Atomic Layer Deposited TiN/ZrO2/Al2O3/Ge Gate Stacks

K.L. Ganapathi, Y.M.Ding, D.Misra and N.Bhat

J. Vac. Sci. Technol. B

Volume: 36(2) Page: 021201 DOI: https://doi.org/10.1116/1.5006789

Year: 2018

Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices

Jithin M. A., K. L. Ganapathi, G. N. V.R. Vikram, N. K. Udayashankar and S. Mohan

Sensors and Actuators-A

Volume: 272 Page: 199-205 DOI: https://doi.org/10.1016/j.sna.2017.12.066

Year: 2018

A sub-thermionic MoS2FET with tunable transport

S. Bhattacharjee , K. L. Ganapathi, S. Mohan and N. Bhat

Applied Physics Letters

Volume: 111(16) Page: 163501 DOI: https://doi.org/10.1063/1.4996953

Year: 2017

Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs

S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat

Advanced Electronic Materials

Volume: 3(1) Page: 1600358 DOI: https://doi.org/10.1002/aelm.201600358

Year: 2017

Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs

S. Bhattacharjee, K.L. Ganapathi, S. Mohan, N. Bhat

ECS Transactions

Volume: 80 (1) Page: 101-107 DOI: doi: 10.1149/08001.0101ecst ECS Trans. 2017 volume 80, issue 1, 101-107

Year: 2017

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon

H. Chandrasekar, S. Kumar, K.L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R Muralidharan, N. Bhat, D.N. Nath

arXiv preprint arXiv:1708.03811

Year: 2017

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon

H. Chandrasekar, S. Kumar, K.L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R Muralidharan, N. Bhat, D.N. Nath

arXiv preprint arXiv:1708.03811

Year: 2017

Electrical, optical, structural and chemical properties of Al2TiO5 films for high-к gate dielectric applications

S. Addepalli, K.L. Ganapathi, S. Uthanna

Materials Science in Semiconductor Processing

Volume: 57 Page: 137-146 DOI: https://doi.org/10.1016/j.mssp.2016.10.019

Year: 2017

High-performance HfO2 back gated multilayer MoS2 transistors

K.L. Ganapathi, S. Bhattacharjee, S. Mohan and N.Bhat

IEEE Electron Device Letters

Volume: 37(6) Page: 797-800 DOI: 10.1109/LED.2016.2553059

Year: 2016

Surface State Engineering of Metal/MoS₂ Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

S. Bhattacharjee*, K.L. Ganapathi*, D. N. Nath and N. Bhat ('*'--Authors equally contributed)

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume: 63(6) Page: 2556-2562 DOI: 10.1109/TED.2016.2554149

Year: 2016

Effect of post plasma oxidation on Ge gate stacks interface formation

Sromana Mukhopadhyay, Shilpa Mitra, YI Ming Ding, KL Ganapathi, Durga Misra, Navakanta Bhat, Kandabara Tapily, Robert D Clark, Steven Consiglio, Cory S Wajda, Gert J Leusink

ECS Transactions

Volume: 72 (4) Page: 303-312 DOI: doi: 10.1149/07204.0303ecst

Year: 2016

Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

ShubhadBhattacharjee, Lakshmi Ganapathi Kolla, Digbijoy Nath, Navakanta Bhat

IEEE ELECTRON DEVICE LETTERS

Volume: 37(1) Page: 119-122 DOI: 10.1109/LED.2015.2501323

Year: 2015

Optical-Phonon-Limited High-Field Transport in Layered Materials

H. Chandrasekar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat, D. N. Nath

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume: 63(2) Page: 767-772 DOI: 10.1109/TED.2015.2508036

Year: 2015

Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

Kolla Lakshmi Ganapathi, Navakanta Bhat, Sangeneni Mohan

Semiconductor Science and Technology

Volume: 29(5) Page: 055007 DOI: https://doi.org/10.1088/0268-1242/29/5/055007

Year: 2014

Optimization of HfO2 films for high transconductance back gated graphene transistors

Kolla Lakshmi Ganapathi, Navakanta Bhat, Sangeneni Mohan

Applied Physics Letters

Volume: 103(7) Page: 073105 DOI: https://doi.org/10.1063/1.4818467

Year: 2013