Lakshmi Ganapathi
DST INSPIRE FacultyMSRC 110
Ph.D. IISc Bangalore
Areas of Interest
✔ Nanoelectronic devices
✔ Device Physics
✔ 2D materials and High-k dielectrics integration
✔ Thin films Synthesis
✔ Properties and their Applications
Current Research
We explore the physics of nanoscale devices and their applications in emerging technologies including electronic (ferroelectric non-volatile memory and logic devices), optoelectronics (UV& Broadband photodetectors and random lasers) and quantum technologies. We understand the physics of 2D semiconductors and 3D oxide interfaces and develop new functional devices. We develop the processes for the integration of heterogeneous functional materials and devices.
Students
Current PhD Students
✔ PH17D044 LAVUDYA DEVENDAR (Co-Guidance)
✔ PH18D202 SUBHAJIT CHATTERJEE (Co-Guidance)
✔ PH19D201 SHOUVIK CHOUDHURY (Co-Guidance)
Recent Publications
- ✔ Interface States Reduction in Atomic Layer Deposited TiN/ZrO2/Al2O3/Ge Gate Stacks. K.L. Ganapathi, Y.M.Ding, D.Misra and N.Bhat. J. Vac. Sci. Technol. B. 36(2). 021201 . 2018.
- ✔ Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices. Jithin M. A., K. L. Ganapathi, G. N. V.R. Vikram, N. K. Udayashankar and S. Mohan. Sensors and Actuators-A. 272 . 199-205. 2018.
- ✔ A sub-thermionic MoS2FET with tunable transport. S. Bhattacharjee , K. L. Ganapathi, S. Mohan and N. Bhat. Applied Physics Letters. 111(16). 163501 . 2017.
- ✔ Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in Highâ€Performance Multilayer MoS2 FETs. S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat. Advanced Electronic Materials. 3(1). 1600358 . 2017.
- ✔ Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs. S. Bhattacharjee, K.L. Ganapathi, S. Mohan, N. Bhat. ECS Transactions. 80 (1). 101-107 . 2017.
- ✔ Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon. H. Chandrasekar, S. Kumar, K.L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R Muralidharan, N. Bhat, D.N. Nath. arXiv preprint arXiv:1708.03811. 2017.
- ✔ Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon. H. Chandrasekar, S. Kumar, K.L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R Muralidharan, N. Bhat, D.N. Nath. arXiv preprint arXiv:1708.03811. 2017.
- ✔ Electrical, optical, structural and chemical properties of Al2TiO5 films for high-к gate dielectric applications. S. Addepalli, K.L. Ganapathi, S. Uthanna. Materials Science in Semiconductor Processing. 57 . 137-146. 2017.
- ✔ High-performance HfO2 back gated multilayer MoS2 transistors. K.L. Ganapathi, S. Bhattacharjee, S. Mohan and N.Bhat. IEEE Electron Device Letters. 37(6). 797-800 . 2016.
- ✔ Surface State Engineering of Metal/MoSâ‚‚ Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability. S. Bhattacharjee*, K.L. Ganapathi*, D. N. Nath and N. Bhat ('*'--Authors equally contributed). IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(6). 2556-2562. 2016.
Teaching
✔ 2018 : (Jul-Nov) - PH5670 Physics & Tech. of Thin Flims
✔ 2019 : (Jan - May) - PH6011 Nanomaterials and Nanotechnology/ PH6015 Advanced Materials and Nanotechnology Lab; (Jul - Nov) - PH1030 Physics Laboratory I/ PH5060 Physics Lab I (PG)/ PH5670 Phys
✔ 2020 : (Jan - May) - PH5120 Physics Lab II (PG)/ PH6011 Nanomaterials and Nanotechnology; (Jul - Nov) - Laboratory for Synthesis and characterization of Functional Materials/ PH5670 Physics & Tech.
✔ 2021 : (Jan - May) - PH1030 Physics Laboratory I/ PH6011 Nanomaterials and Nanotechnology; (Jul - Nov) - PH5040 Electronics/ PH5330 Laboratory for Synthesis and characterization of Functional Material
✔ 2022 : (Jan - May) - PH1020 Physics II