Present Address S.D. Ramarao Graduate student Microwave Lab, HSB 222 Department of Physics IIT Madras Chennai - 600 036
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Permanent Address S.D. Ramarao C/O Y. Umasutha Rao H.No: 15-2-185 Macherla - 522 426 Guntur (Dt) Andhra Pradesh.
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Doctor of Philosophy (Ph.D) - 2010 - In progress
Master of Science (Physics) - 2009
Bachelor of Science (Maths, Physics & Chemistry) - 2007
Intermediate (Maths, Physics & Chemistry) - 2004
- Board of Intermediate Education.
- Krishnaveni Junior College, Macherla.
- Aggregate: 93.2%
S.S.C - 2001
- Board of Secondary Education.
- Z.P.H.School (Boys), Macherla.
- Aggregate: 87.5%
Achievements
- National level entrance examinations.
- Qualified joint CSIR-UGC national eligibility test (NET) for junior research fellowship (JRF) and lecturership in "Physical Sciences" held in Dec 2009.
- Qualified BARC training school (OCES/DGFS-2010) entrance test.
- All India Rank: 106 in Graduate Aptitude Test in Engineering (GATE) held in 2010.
- State level M.Sc entrance examinations.
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Research Work
 
I am S.D. Ramarao (Rams), graduate student in Department of Physics, IIT Madras. I am working under
the guidence of Prof. V.R.K. Murthy in Microwave Laboratory. My research project
is mainly focus on Dielectric resonator materials, which are key materials for fabrication of electronic devices such as oscillators and filters etc. operating in microwave frequency range. The basic working principle of
dielectric resonator is that, "when a properly designed dielectric material is fed with an electromagnetic energy in an appropriate direction, it can confine microwave energy at few discrete frequencies through total
internal reflections at dielectric-air interface".
The main requirements of Dielectric resonators.
- Dielectric constant: As the wavelength of electromagnetic wave in the dielectric material is inversaly proportional to square root of dielectric constant,
a key factor in reducing the size of electronic devices.
- Quality factor (Dielectric loss): Dielectric resonators should possess high quality factor (Q>3000 at 10 GHz) which will helpful in enhancing the signal to noise ratio.
- Temperatue coefficient of resonant frequency: The performance of dielectric resonators at different atmospheric conditons is influenced by this factor and whose value should
be near zero. An ideal dielectric resonator should possess zero temperature coefficient of resonant frequency.
 
A more recent advancement in microelectronic and electronic packing industry is the Low Temperature Cofired Ceramics (LTCC) technology where these dielectric resonators gaining much attention.
- Low Temperature Cofired Ceramic (LTCC) Technology: In this LTCC technology, all active and passive elements (capacitors, inductors, resistors and transformers etc.) are embedded in a single ceramic module.
Conductive electrodes such as Ag and Cu are used for making the circuitry.
 
In my research project, mainly i am studying the effect of structral parameters such as nature of bonding, packing fraction and octahedral distortions etc. on microwave dielectric properties of ABO4 type Ceramic compositions. Depending on the ionic radius of A-site cation or RA/RB ratio, ABO4 compounds posses Scheelite (S.G: I 41/a) and Wolframite structure (S.G: P 2/c).
Publications:
- S.D. Ramarao, S. Roopas Kiran and V.R.K. Murthy, "Structural, lattice vibrational, optical and microwave dielectric studies on Ca1-xSrxMoO4 ceramics with Scheelite structure",Materials Research Bulletin 56, 71 (2014)
- S.D. Ramarao and V.R.K. Murthy, "Crystal structure refinement and microwave dielectric properties of new low dielectric loss AZrNb2O8 (A: Mn, Zn, Mg and Co) ceramics", Scripta Materialia, 69, 274 (2013).
- S.D. Ramarao, S. Roopas Kiran and V.R.K. Murthy, "Correlation between structural characteristics
and microwave dielectric properties of scheelite Ca1-xCdxMoO4 solid solution", Journal of the American Ceramic Society 95 , 3532 (2012).
Conferences:
Oral Presentations:
- S.D. Ramarao and V.R.K. Murthy, "Temperature and composition induced phase transition in SmNbO4", International Symposium for Research scholars on Metallurgy, Materials science & Engineering,
(ISRS),11-13 December 2014, IIT Madras, India.
- S.D. Ramarao and V.R.K. Murthy, "Influence of Structural Characteristics on Microwave Dielectric Properties
of Zn1-xNixWO4 Solid solution", International Union of Materials Research Society - ICA, 16-20 Dec 2013 - IISc Bangalore, India.
- S.D. Ramarao and V.R.K. Murthy, "Structural refinement and microwave dielectric properties of AWO4 (A: Zn, Ni and Cd) compounds with wolframite structure", second Interanational
Conference on Advances in materials Processing and Characterization, 6-8th Feb 2013, Anna University, Chennai, India.
- S.D. Ramarao and V.R.K. Murthy, "Effect of microwave sintering on lattice vibrations
and microwave dielectric properties of ZnWO4 ceramics", International Symposium for Research scholars on Metallurgy, Materials science & Engineering,
(ISRS),13-15 December 2012, IIT Madras, India.
- S.D. Ramarao, S. Roopas Kiran and V.R.K. Murthy, "Correlation between structural charactaristics and microwave dielectric
properties of Ca1-xCdxMoO4 ceramics", International Conference on Recent trends in Advanced Materials (ICRAM), 20-22 Feb 2012, VIT University, Vellore, India.
Poster Presentations:
- S.D. Ramarao and V.R.K. Murthy, "Ferroelastic phase transition in SmNbO4: An in-situ X-ray diffraction study and its microwave dielectric properties", Second International Conference on Advanced Functional Materials (ICAFM),
19-21 Feb 2014, NIIST Thiruvananthapuram, Kerala, India.
- S.D. Ramarao and V.R.K. Murthy, "Phase transition in SmNb1-xVxO4 system: X-ray diffraction
and lattice vibrational analysis", Fourth International Conference on Recent Advances in Composite Materials (ICRACM), 18-21 Feb 2013, Department of Machanical
Engineering, IIT BHU, Varanasi, Venue: International Centre Goa, Goa, India.
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Contact Address
S.D. Ramarao Seniour Research Fellow Microwave Laboratory, HSB 222 Department of Physics IIT Madras Mail: dasaradh4phy@gmail.com.
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