Faculty Details

Areas of Interest

• Condensed Matter Physics
• Van der Waals layered materials and their heterostructures
• Non-volatile memory Technology
• CMOS device Physics and Technology

Current Research

Currently my group is exclusively exploring various kinds of layered materials to study fundamental physics as well as to develop novel multifunctional electronic and optoelectronic devices based on layered materials. We are working on the growth of high quality layered materials and their integration in to devices. With the support of IIT Madras (under IOE grant) and other Govt. funding agencies, we have nucleated a research Centre "Centre for 2D Materials Research and Innovations" at IIT Madras. Key research activities of this center are:

(1) Growth of high quality layered materials (TMDCs, h-BN)
(2) Development of energy efficient memristors for future electronics.
(3) Exploring excitonic physics in layered materials and their heterostructures.
(4) Investigating carrier transport in layered materials and their heterostructures.

Students

Current PhD Students

• PH18D046    RENU YADAV
• PH18D050    SAROJ POUDYAL
• PH19D002    BUBUNU BISWAL
• PH21D009    WAHIDUR RAHMAN
• PH20D200    MRINAL DEKA
• Ph21D077    Anusree S
• Ph23D072    Pooja Singh Tomar
• Ph24D014    Ajay Kumar
• PH23M005    Mohit

Recent Publications

• A memristive dendritic device with chemical vapor deposited monolayer MoS2 film. Asmita S. Thool, Sourodeep Roy, Upasana Mukherjee, Prahalad Kanti Barman, Saroj Poudyal, Abhishek Misra, and Bhaswar Chakrabarti. ACS Applied Electronic Materials. 6. 1299–1307. 2024.
• Robust valley quantum coherence in synthetic 3R-phase MoS2: A material for future valley based devices. Ramesh Rajarapu, Prahalad Kanti Barman*, Bubunu Biswal, Saroj Poudyal, Renu Yadav, Mrinal Deka, Wahidur Rahman, Anusree S, Pramoda K. Nayak, Abhishek Misra*. Applied Physics Letters. 124. 2024.
• Room Temperature, Twist Angle Independent, Momentum Direct Interlayer Excitons in van der Waals Heterostructures with Wide Spectral Tunability. Saroj Poudyal, Mrinal Deka, Priyo Adhikary, Ranju D, Prahalad Kanti Barman, Renu Yadav, Bubunu Biswal, Ramesh Rajarapu, Shantanu Mukherjee, Birabar Ranjit Kumar Nanda, Akshay Singh, Abhishek Misra*. Nano Letters. 2024.
• Layered semimetal electrodes for future heterogeneous electronics. Bubunu Biswal, Ramesh Rajarapu, Saroj Poudyal, Renu Yadav, Prahalad Kanti Barman, Manasi Mandal, Ravi Singh, Birabar Nanda and Abhishek Misra*. Applied Physics Letters. 123. 2023.
• Low Power Volatile and Non-Volatile Memristive Devices from One Dimensional MoO2-MoS2 Core Shell Heterostructures for Future Bio-Inspired Computing. Renu Yadav, Poudyal, R. Rajarapu, B. Biswal, P. K. Barman, S. Kasiviswanathan, K. S. Novoselov and A. Misra*. Willy Small. 2023.
• Work function of van der Waals topological semimetals: Experiment and theory. Bubun Biswal,Shashi B. Mishra, Renu Yadav, Saroj Poudyal, Ramesh Rajarapu, Prahalad Kanti Barman, Khade Ramdas Pandurang, Manasi Mandal, Ravi Prakash Singh, R. K. Nanda, and Abhishek Misra*. Applied Physics Letters. 120. 093101.
  DOI: https://doi.org/10.1063/5.0079032. 2022.
• Pulsed Carrier Gas Assisted High-Quality Synthetic 3R-Phase Sword-like MoS2: A Versatile Optoelectronic Materia. Ramesh Rajarapu, Prahalad Kanti Barman, Renu Yadav, Rabindra Biswas, Manikandan Devaraj, Saroj Poudyal, Bubunu Biswal, Vijay Laxmi,Gopal K. Pradhan,Varun Raghunathan, Pramoda K. Nayak*, and Abhishek Misra*. ACS Nano. 16. 21366–21376. 2022.
• Twisted monolayer and bilayer graphene for vertical tunneling transistors. Davit A Ghazaryan, Abhishek Misra, Evgenii E Vdovin, Kenji Watanabe, Takashi Taniguchi, Sergei V Morozov, Artem Mishchenko, Kostya S Novoselov. Applied Physics Letters. 118. 2021.
• Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe 2/CrBr 3 van der Waals heterostructures. Thomas P Lyons, Daniel Gillard, Alejandro Molina-Sánchez, Abhishek Misra, Freddie Withers, Paul S Keatley, Aleksey Kozikov, Takashi Taniguchi, Kenji Watanabe, Kostya S Novoselov, Joaquín Fernández-Rossier, AI Tartakovskii. Nature Communications. 11 . 1. 2020.
• Planar and van der Waals heterostructures for vertical tunnelling single electron transistors. Gwangwoo Kim, Sung-Soo Kim, Jonghyuk Jeon, Seong In Yoon, Seokmo Hong, Young Jin Cho, Abhishek Misra et al., Andre Geim, Kostya S. Novoselov, & Hyeon Suk Shin. Nature Communications. 2019.
• Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. M.T. Greenaway, E.E. Vdovin, D. Ghazaryan, A. Misra, A. Mishchenko, Y. Cao, Z. Wang, J.R. Wallbank, M. Holwill, Yu.N. Khanin, S.V. Morozov, K. Watanabe, T. Taniguchi, O. Makarovsky, T.M. Fromhold, A. Patanè, A.K. Geim, V.I. Falko, K.S. Novoselov, L. Eaves. COMMUNICATIONS PHYSIC. https://rdcu.be/bdpBV. 2018.
• Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3. D. Ghazaryan, M. T. Greenaway, Z. Wang, V. H. Guarochico-Moreira, I. J. Vera-Marun, J. Yin, Y. Liao, S. V. Morozov, O. Kristanovski, A. I. Lichtenstein, M. I. Katsnelson, F. Withers, A. Mishchenko, L. Eaves, A. K. Geim, K. S. Novoselov* and A. Misra*. Nature Electronics. 1. 344–349.
  DOI: https://doi.org/10.1038/s41928-018-0087-z. 2018.
• Propagating plasmons in a charge-neutral quantum tunneling transistor. Achim Woessner, Abhishek Misra, Yang Cao, Iacopo Torre, Artem Mishchenko, Mark B Lundeberg, Kenji Watanabe, Takashi Taniguchi, Marco Polini, Kostya S Novoselov, Frank HL Koppens. ACS Photonics. 4 (12). 3012–3017.
  DOI: 10.1021/acsphotonics.7b01020. 2017.
• Stacking transition in bilayer graphene caused by thermally activated rotation. Mengjian Zhu, Davit Ghazaryan, Seok-Kyun Son, Colin R Woods, Abhishek Misra, Lin He, Takashi Taniguchi, Kenji Watanabe, Kostya S Novoselov, Yang Cao, Artem Mishchenko. 2D Materials. 4. 2016.
• Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures. JR Wallbank, D Ghazaryan, A Misra, Y Cao, JS Tu, BA Piot, M Potemski, S Pezzini, S Wiedmann, U Zeitler, TLM Lane, SV Morozov, MT Greenaway, Laurence Eaves, AK Geim, VI Fal'ko, KS Novoselov, A Mishchenko. Science. 353. 2016.
• Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors . Evgeny E Vdovin, A Mishchenko, MT Greenaway, MJ Zhu, D Ghazaryan, A Misra, Y Cao, SV Morozov, Oleg Makarovsky, TM Fromhold, Amalia Patanè, GJ Slotman, MI Katsnelson, AK Geim, KS Novoselov, Laurence Eaves. Physical review letters. 116 . 186603. 2016.
• Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorus Implantation . Piyush Bhatt, Prashant Swarnkar, Abhishek Misra, Jayeeta Biswas, Christopher Hatem, Aneesh Nainani, Saurabh Lodha . IEEE Transactions on Electron Devices. 62. 69-74. 2015.
• Reduced multilayer graphene oxide floating gate flash memory with large memory window and robust retention characteristics. Abhishek Mishra, Amritha Janardanan, Manali Khare, Hemen Kalita, Anil Kottantharayil. IEEE Electron Device Letters. 34. 1136-1138. 2013.
• Work function modulation and thermal stability of reduced graphene oxide gate electrodes in MOS devices. Abhishek Misra, Hemen Kalita, Anil Kottantharayil. ACS applied materials & interfaces. 6. 2. 2013.
• Aluminum oxide deposited by pulsed-DC reactive sputtering for crystalline silicon surface passivation. Meenakshi Bhaisare, Abhishek Misra, Anil Kottantharayil. IEEE Journal of Photovoltaics. 3. 930-935. 2013.
• Electrical transport and electromigration studies on nickel encapsulated carbon nanotubes: possible future interconnects. Neha Kulshrestha, Abhishek Misra, DS Misra. Nanotechnology. 24. 185201. 2013.
• Electrical Transport and Breakdown in Graphene Multilayers Loaded with Electron Beam Induced Deposited Platinum. Neha Kulshrestha, Abhishek Misra, Nikhil Koratkar, DS Misra. ACS applied materials & interfaces . 5. 3424-3430. 2013.
• Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications. Abhishek Misra, Mayur Waikar, Amit Gour, Hemen Kalita, Manali Khare, Mohammed Aslam, Anil Kottantharayil. Applied Physics Letters. 100. 233506. 2012.
• Investigation of metal-induced enhancement in electrical conductance of multiwalled carbon nanotubes. Neha Kulshrestha, Abhishek Misra, Reeti Bajpai, Soumyendu Roy, DS Misra. IEEE Transactions on Nanotechnology. 11. 830-835. 2012.
• High Quality al2o3 dielectric films deposited by pulsed-dc reactive sputtering technique for high-k applications. Meenakshi Bhaisare, Abhishek Misra, Mayur Waikar, Anil Kottantharayil. Nanoscience and Nanotechnology Letters. 4. 645-650. 2012.
• Ceasing of voltage switching amongst graphitic shells in multiwalled carbon nanotubes: A route toward stability. Neha Kulshrestha, Abhishek Misra, Reeti Bajpai, Soumyendu Roy, DS Misra. Applied Physics Letters. 100. 043505. 2012.
• Healing of broken multiwalled carbon nanotubes using very low energy electrons in SEM: a route toward complete recovery. Neha Kulshrestha, Abhishek Misra, Kiran Shankar Hazra, Soumyendu Roy, Reeti Bajpai, Dipti Ranjan Mohapatra, DS Misra. ACS nano. 5. 1724-1730. 2011.
• Effect of top metal contact on electrical transport through individual multiwalled carbon nanotubes. Neha Kulshrestha, Abhishek Misra, Senthil Srinivasan, Kiran Shankar Hazra, Reeti Bajpai, Soumyendu Roy, Gayatri Vaidya, DS Misra. Applied Physics Letters. 97. 222102. 2010.

Teaching

• 2018 :  (Jul - Nov) - PH1010 Physics I
• 2019 :  (Jan - May) - EP3190 Engineering Physics Lab II/ PH2080 Physics Lab IV; (Jul - Nov) - PH1010 Physics I
• 2020 :  (Jan - May) - PH1030 Physics Laboratory I/PH6012 Fundamentals of Semiconductor Physics and Devices; (Jul - Nov) - PH1010 Physics I
• 2021 :  (Jan - May) - EP3291 Engineering Physics Lab IV/ PH6012 Fundamentals of Semiconductor Physics and Devices; (Jul - Nov) - PH1010 Physics I / EP3291 - Engineering Physics Lab IV
• 2022 :  (Jan - May) - EP3291 Engineering Physics Lab IV / PH6011 Nanomaterials and Nanotechnology/ PH6012 Fundamentals of Semiconductor Physics and Devices ; (July-Nov) - PH1010 Physics I
• 2023 :  (Jan - May) - PH2080 Physics Lab IV/ PH6012 Fundamentals of Semiconductor Physics and Devices
• 2024 :  test