Faculty Details

Areas of Interest

• Nanoelectronic devices
• Device Physics
• 2D materials and High-k dielectrics integration
• Thin films Synthesis
• Properties and their Applications

Current Research

We explore the physics of nanoscale devices and their applications in emerging technologies including electronic (ferroelectric non-volatile memory and logic devices), optoelectronics (UV& Broadband photodetectors and random lasers) and quantum technologies. We understand the physics of 2D semiconductors and 3D oxide interfaces and develop new functional devices. We develop the processes for the integration of heterogeneous functional materials and devices.

Students

Current PhD Students

• PH17D044    LAVUDYA DEVENDAR (Co-Guidance)
• PH18D202    SUBHAJIT CHATTERJEE (Co-Guidance)
• PH19D201    SHOUVIK CHOUDHURY (Co-Guidance)

Recent Publications

• Interface States Reduction in Atomic Layer Deposited TiN/ZrO2/Al2O3/Ge Gate Stacks. K.L. Ganapathi, Y.M.Ding, D.Misra and N.Bhat. J. Vac. Sci. Technol. B. 36(2). 021201 . 2018.
• Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices. Jithin M. A., K. L. Ganapathi, G. N. V.R. Vikram, N. K. Udayashankar and S. Mohan. Sensors and Actuators-A. 272 . 199-205. 2018.
• A sub-thermionic MoS2FET with tunable transport. S. Bhattacharjee , K. L. Ganapathi, S. Mohan and N. Bhat. Applied Physics Letters. 111(16). 163501 . 2017.
• Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs. S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat. Advanced Electronic Materials. 3(1). 1600358 . 2017.
• Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs. S. Bhattacharjee, K.L. Ganapathi, S. Mohan, N. Bhat. ECS Transactions. 80 (1). 101-107 . 2017.
• Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon. H. Chandrasekar, S. Kumar, K.L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R Muralidharan, N. Bhat, D.N. Nath. arXiv preprint arXiv:1708.03811. 2017.
• Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon. H. Chandrasekar, S. Kumar, K.L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R Muralidharan, N. Bhat, D.N. Nath. arXiv preprint arXiv:1708.03811. 2017.
• Electrical, optical, structural and chemical properties of Al2TiO5 films for high-к gate dielectric applications. S. Addepalli, K.L. Ganapathi, S. Uthanna. Materials Science in Semiconductor Processing. 57 . 137-146. 2017.
• High-performance HfO2 back gated multilayer MoS2 transistors. K.L. Ganapathi, S. Bhattacharjee, S. Mohan and N.Bhat. IEEE Electron Device Letters. 37(6). 797-800 . 2016.
• Surface State Engineering of Metal/MoSâ‚‚ Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability. S. Bhattacharjee*, K.L. Ganapathi*, D. N. Nath and N. Bhat ('*'--Authors equally contributed). IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(6). 2556-2562. 2016.
• Effect of post plasma oxidation on Ge gate stacks interface formation. Sromana Mukhopadhyay, Shilpa Mitra, YI Ming Ding, KL Ganapathi, Durga Misra, Navakanta Bhat, Kandabara Tapily, Robert D Clark, Steven Consiglio, Cory S Wajda, Gert J Leusink. ECS Transactions. 72 (4) . 303-312. 2016.
• Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET. ShubhadBhattacharjee, Lakshmi Ganapathi Kolla, Digbijoy Nath, Navakanta Bhat. IEEE ELECTRON DEVICE LETTERS. 37(1). 119-122. 2015.
• Optical-Phonon-Limited High-Field Transport in Layered Materials. H. Chandrasekar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat, D. N. Nath. IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(2). 767-772 . 2015.
• Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors. Kolla Lakshmi Ganapathi, Navakanta Bhat, Sangeneni Mohan. Semiconductor Science and Technology. 29(5). 055007. 2014.
• Optimization of HfO2 films for high transconductance back gated graphene transistors. Kolla Lakshmi Ganapathi, Navakanta Bhat, Sangeneni Mohan. Applied Physics Letters. 103(7). 073105 . 2013.

Teaching

• 2018 :  (Jul-Nov) - PH5670 Physics & Tech. of Thin Flims
• 2019 :  (Jan - May) - PH6011 Nanomaterials and Nanotechnology/ PH6015 Advanced Materials and Nanotechnology Lab; (Jul - Nov) - PH1030 Physics Laboratory I/ PH5060 Physics Lab I (PG)/ PH5670 Phys
• 2020 :  (Jan - May) - PH5120 Physics Lab II (PG)/ PH6011 Nanomaterials and Nanotechnology; (Jul - Nov) - Laboratory for Synthesis and characterization of Functional Materials/ PH5670 Physics & Tech.
• 2021 :  (Jan - May) - PH1030 Physics Laboratory I/ PH6011 Nanomaterials and Nanotechnology; (Jul - Nov) - PH5040 Electronics/ PH5330 Laboratory for Synthesis and characterization of Functional Material
• 2022 :  (Jan - May) - PH1020 Physics II